{ "id": "1307.4797", "version": "v1", "published": "2013-07-17T22:03:52.000Z", "updated": "2013-07-17T22:03:52.000Z", "title": "Review of the Low-Frequency 1/f Noise in Graphene Devices", "authors": [ "Alexander A. Balandin" ], "comment": "25 manuscript pagers with 5 figures", "journal": "Nature Nanotechnology, 8, 549 (2013)", "categories": [ "cond-mat.mes-hall", "cond-mat.mtrl-sci" ], "abstract": "Low-frequency noise with a spectral density that depends inversely on frequency (f) has been observed in a wide variety of systems including current fluctuations in resistors, intensity fluctuations in music and signals in human cognition. In electronics, the phenomenon, which is known as 1/f noise, flicker noise or excess noise, hampers the operation of numerous devices and circuits, and can be a significant impediment to development of practical applications from new materials. Graphene offers unique opportunities for studying 1/f noise because of its 2D structure and carrier concentration tuneable over a wide range. The creation of practical graphene-based devices will also depend on our ability to understand and control the low-frequency 1/f noise in this material system. Here, I review the characteristic features of 1/f noise in graphene and few-layer graphene, and examine the implications of such noise for the development of graphene-based electronics including high-frequency devices and sensors.", "revisions": [ { "version": "v1", "updated": "2013-07-17T22:03:52.000Z" } ], "analyses": { "keywords": [ "graphene devices", "graphene offers unique opportunities", "current fluctuations", "intensity fluctuations", "human cognition" ], "tags": [ "journal article" ], "publication": { "doi": "10.1038/nnano.2013.144", "journal": "Nature Nanotechnology", "year": 2013, "month": "Aug", "volume": 8, "pages": 549 }, "note": { "typesetting": "TeX", "pages": 0, "language": "en", "license": "arXiv", "status": "editable", "adsabs": "2013NatNa...8..549B" } } }