{
  "id": "1307.3792",
  "version": "v1",
  "published": "2013-07-14T22:59:19.000Z",
  "updated": "2013-07-14T22:59:19.000Z",
  "title": "Transient stimulated emission from multi-split-gated graphene structure",
  "authors": [
    "A. Satou",
    "F. T. Vasko",
    "T. Otsuji",
    "V. V. Mitin"
  ],
  "comment": "8 pages, 8 figures",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "Mechanism of transient population inversion in graphene with multi-splitted (interdigitated) top-gate and grounded back gate is suggested and examined for the mid-infrared (mid-IR) spectral region. Efficient stimulated emission after fast lateral spreading of carriers due to drift-diffusion processes is found for the case of a slow electron-hole recombination in the passive region. We show that with the large gate-to-graphene distance the drift process always precedes the diffusion process, due to the ineffective screening of the inplane electric field by the gates. Conditions for lasing with a gain above 100 cm$^{-1}$ are found for cases of single- and multi-layer graphene placed in the waveguide formed by the top and back gates. Both the waveguide losses and temperature effects are analyzed.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2013-07-14T22:59:19.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "multi-split-gated graphene structure",
      "transient stimulated emission",
      "transient population inversion",
      "inplane electric field",
      "large gate-to-graphene distance"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "doi": "10.1088/0022-3727/47/5/055103",
      "journal": "Journal of Physics D Applied Physics",
      "year": 2014,
      "month": "Feb",
      "volume": 47,
      "number": 5,
      "pages": "055103"
    },
    "note": {
      "typesetting": "TeX",
      "pages": 8,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2014JPhD...47e5103S"
    }
  }
}