{
  "id": "1305.5589",
  "version": "v1",
  "published": "2013-05-24T00:49:27.000Z",
  "updated": "2013-05-24T00:49:27.000Z",
  "title": "Fano resonance in Raman scattering of graphene",
  "authors": [
    "Duhee Yoon",
    "Dongchan Jeong",
    "Hu-Jong Lee",
    "Riichiro Saito",
    "Young-Woo Son",
    "Hyun Cheol Lee",
    "Hyeonsik Cheong"
  ],
  "comment": "18 pages, 3 figures, to appear in Carbon",
  "doi": "10.1016/j.carbon.2013.05.019",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "Fano resonances and their strong doping dependence are observed in Raman scattering of single-layer graphene (SLG). As the Fermi level is varied by a back-gate bias, the Raman G band of SLG exhibits an asymmetric line shape near the charge neutrality point as a manifestation of a Fano resonance, whereas the line shape is symmetric when the graphene sample is electron or hole doped. However, the G band of bilayer graphene (BLG) does not exhibit any Fano resonance regardless of doping. The observed Fano resonance can be interpreted as interferences between the phonon and excitonic many-body spectra in SLG. The absence of a Fano resonance in the Raman G band of BLG can be explained in the same framework since excitonic interactions are not expected in BLG.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2013-05-24T00:49:27.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "fano resonance",
      "raman scattering",
      "excitonic many-body spectra",
      "charge neutrality point",
      "asymmetric line shape"
    ],
    "tags": [
      "journal article"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 18,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2013arXiv1305.5589Y"
    }
  }
}