{ "id": "1304.4897", "version": "v1", "published": "2013-04-17T17:54:05.000Z", "updated": "2013-04-17T17:54:05.000Z", "title": "Phase-space for the breakdown of the quantum Hall effect in epitaxial graphene", "authors": [ "J. A. Alexander-Webber", "A. M. R. Baker", "T. J. B. M. Janssen", "A. Tzalenchuk", "S. Lara-Avila", "S. Kubatkin", "R. Yakimova", "B. A. Piot", "D. K. Maude", "R. J. Nicholas" ], "categories": [ "cond-mat.mes-hall" ], "abstract": "We report the phase-space defined by the quantum Hall effect breakdown in polymer gated epitaxial graphene on SiC (SiC/G) as a function of temperature, current, carrier density, and magnetic fields up to 30T. At 2K breakdown currents ($I_c$) almost two orders of magnitude greater than in GaAs devices are observed. The phase boundary of the dissipationless state ($\\rho_{xx}=0$) shows a (1-$(T/T_c)^2$) dependence and persists up to $T_c>45K$ at 29T. With magnetic field $I_c$ was found to increase $\\propto B^{3/2}$ and $T_c \\propto B^{1.88}$. As the Fermi energy approaches the Dirac point, the $\\nu=2$ quantized Hall plateau appears continuously from fields as low as 1T up to at least 19T due to a strong magnetic field dependence of the carrier density.", "revisions": [ { "version": "v1", "updated": "2013-04-17T17:54:05.000Z" } ], "analyses": { "subjects": [ "72.80.Vp", "72.10.Di", "73.43.Qt" ], "keywords": [ "epitaxial graphene", "hall plateau appears", "phase-space", "quantum hall effect breakdown", "carrier density" ], "tags": [ "journal article" ], "publication": { "doi": "10.1103/PhysRevLett.111.096601", "journal": "Physical Review Letters", "year": 2013, "month": "Aug", "volume": 111, "number": 9, "pages": "096601" }, "note": { "typesetting": "TeX", "pages": 0, "language": "en", "license": "arXiv", "status": "editable", "adsabs": "2013PhRvL.111i6601A" } } }