{ "id": "1302.1057", "version": "v1", "published": "2013-02-05T15:01:08.000Z", "updated": "2013-02-05T15:01:08.000Z", "title": "Reactive-Ion-Etched Graphene Nanoribbons on a Hexagonal Boron Nitride Substrate", "authors": [ "Dominik Bischoff", "Tobias Krähenmann", "Susanne Dröscher", "Michelle A. Gruner", "Clément Barraud", "Thomas Ihn", "Klaus Ensslin" ], "journal": "APPLIED PHYSICS LETTERS 101, 203103 (2012)", "doi": "10.1063/1.4765345", "categories": [ "cond-mat.mes-hall" ], "abstract": "We report on the fabrication and electrical characterization of both single layer graphene micron-sized devices and nanoribbons on a hexagonal boron nitride substrate. We show that the micron-sized devices have significantly higher mobility and lower disorder density compared to devices fabricated on silicon dioxide substrate in agreement with previous findings. The transport characteristics of the reactive-ion-etched graphene nanoribbons on hexagonal boron nitride, however, appear to be very similar to those of ribbons on a silicon dioxide substrate. We perform a detailed study in order to highlight both similarities as well as differences. Our findings suggest that the edges have an important influence on transport in reactive ion-etched graphene nanodevices.", "revisions": [ { "version": "v1", "updated": "2013-02-05T15:01:08.000Z" } ], "analyses": { "subjects": [ "81.07.Bc", "81.65.Cf", "72.80.Vp", "72.20.Fr" ], "keywords": [ "hexagonal boron nitride substrate", "reactive-ion-etched graphene nanoribbons", "silicon dioxide substrate", "single layer graphene micron-sized devices" ], "tags": [ "journal article" ], "publication": { "publisher": "AIP", "journal": "Applied Physics Letters", "year": 2012, "month": "Nov", "volume": 101, "number": 20, "pages": 203103 }, "note": { "typesetting": "TeX", "pages": 0, "language": "en", "license": "arXiv", "status": "editable", "adsabs": "2012ApPhL.101t3103B" } } }