{
  "id": "1302.0945",
  "version": "v2",
  "published": "2013-02-05T06:34:08.000Z",
  "updated": "2013-07-23T02:17:35.000Z",
  "title": "Large Current Modulation and Spin-Dependent Tunneling of Vertical Graphene/MoS$_{2}$ Heterostructures",
  "authors": [
    "Nojoon Myoung",
    "Kyungchul Seo",
    "Seung Joo Lee",
    "Gukhyung Ihm"
  ],
  "comment": "19 pages, 5 figures",
  "journal": "ACS Nano 7, 7021 (2013)",
  "doi": "10.1021/nn402919d",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "Vertical graphene heterostructures have been introduced as an alternative architecture for electronic devices by using quantum tunneling. Here, we present that the current on/off ratio of vertical graphene field-effect transistors is enhanced by using an armchair graphene nanoribbon as an electrode. Moreover, we report spin-dependent tunneling current of the graphene/MoS2 heterostructures. When an atomically thin MoS2 layer sandwiched between graphene electrodes becomes magnetic, Dirac fermions with different spins feel different height of the tunnel barrier, leading to spin-dependent tunneling. Our finding will develop the present graphene heterostructures for electronic devices by improving the device performance and by adding the possibility of spintronics based on graphene.",
  "revisions": [
    {
      "version": "v2",
      "updated": "2013-07-23T02:17:35.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "large current modulation",
      "spin-dependent tunneling",
      "vertical graphene/mos",
      "thin mos2 layer",
      "graphene heterostructures"
    ],
    "tags": [
      "journal article"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 19,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2013arXiv1302.0945M"
    }
  }
}