{
  "id": "1301.2813",
  "version": "v4",
  "published": "2013-01-13T19:50:15.000Z",
  "updated": "2013-03-28T12:49:07.000Z",
  "title": "Intrinsic carrier mobility of multi-layered MoS$_2$ field-effect transistors on SiO$_2$",
  "authors": [
    "N. R. Pradhan",
    "D. Rhodes",
    "Q. Zhang",
    "S. Talapatra",
    "M. Terrones",
    "P. M. Ajayan",
    "L. Balicas"
  ],
  "comment": "8 pages, 5 figures, typos fixed, and references updated",
  "journal": "Appl. Phys. Lett. 102, 123105 (2013)",
  "categories": [
    "cond-mat.mes-hall",
    "cond-mat.other"
  ],
  "abstract": "By fabricating and characterizing multi-layered MoS$_2$-based field-effect transistors (FETs) in a four terminal configuration, we demonstrate that the two terminal-configurations tend to underestimate the carrier mobility $\\mu$ due to the Schottky barriers at the contacts. For a back-gated two-terminal configuration we observe mobilities as high as 125 cm$^2$V$^{-1}$s$^{-1}$ which is considerably smaller than 306.5 cm$^2$V$^{-1}$s$^{-1}$ as extracted from the same device when using a four-terminal configuration. This indicates that the intrinsic mobility of MoS$_2$ on SiO$_2$ is significantly larger than the values previously reported, and provides a quantitative method to evaluate the charge transport through the contacts.",
  "revisions": [
    {
      "version": "v4",
      "updated": "2013-03-28T12:49:07.000Z"
    }
  ],
  "analyses": {
    "subjects": [
      "85.30.Tv"
    ],
    "keywords": [
      "intrinsic carrier mobility",
      "field-effect transistors",
      "multi-layered mos",
      "intrinsic mobility",
      "four-terminal configuration"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "doi": "10.1063/1.4799172",
      "journal": "Applied Physics Letters",
      "year": 2013,
      "month": "Mar",
      "volume": 102,
      "number": 12,
      "pages": 123105
    },
    "note": {
      "typesetting": "TeX",
      "pages": 8,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2013ApPhL.102l3105P"
    }
  }
}