{
  "id": "1211.3096",
  "version": "v1",
  "published": "2012-11-13T20:16:02.000Z",
  "updated": "2012-11-13T20:16:02.000Z",
  "title": "Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers",
  "authors": [
    "S. Larentis",
    "B. Fallahazad",
    "E. Tutuc"
  ],
  "comment": "4 pages, 4 figures; to appear in Appl. Phys. Lett",
  "journal": "Appl. Phys. Lett. 101, 223104 (2012)",
  "doi": "10.1063/1.4768218",
  "categories": [
    "cond-mat.mes-hall",
    "cond-mat.mtrl-sci"
  ],
  "abstract": "We report the fabrication of back-gated field-effect transistors (FETs) using ultra-thin, mechanically exfoliated MoSe2 flakes. The MoSe2 FETs are n-type and possess a high gate modulation, with On/Off ratios larger than 106. The devices show asymmetric characteristics upon swapping the source and drain, a finding explained by the presence of Schottky barriers at the metal contact/MoSe2 interface. Using four-point, back-gated devices we measure the intrinsic conductivity and mobility of MoSe2 as a function of gate bias, and temperature. Samples with a room temperature mobility of ~50 cm2/V.s show a strong temperature dependence, suggesting phonons are a dominant scattering mechanism.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2012-11-13T20:16:02.000Z"
    }
  ],
  "analyses": {
    "subjects": [
      "85.30.Tv"
    ],
    "keywords": [
      "ultra-thin mose2 layers",
      "field-effect transistors",
      "intrinsic mobility",
      "room temperature mobility",
      "high gate modulation"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "journal": "Applied Physics Letters",
      "year": 2012,
      "month": "Nov",
      "volume": 101,
      "number": 22,
      "pages": 223104
    },
    "note": {
      "typesetting": "TeX",
      "pages": 4,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2012ApPhL.101v3104L"
    }
  }
}