{
  "id": "1209.6234",
  "version": "v1",
  "published": "2012-09-27T14:07:24.000Z",
  "updated": "2012-09-27T14:07:24.000Z",
  "title": "Electronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties",
  "authors": [
    "P. Klenovský",
    "V. Křápek",
    "D. Munzar",
    "J. Humlíček"
  ],
  "journal": "APPLIED PHYSICS LETTERS 97, 203107 (2010)",
  "doi": "10.1063/1.3517446",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "The electronic structure of InAs quantum dots covered with the GaAs(1-y)Sb(y) strain reducing layer has been studied using the k.p theory. We explain previous experimental observations of the red shift of the photoluminescence emission with increasing y and its blue shift with increasing excitation power. For y>0.19 type-II dots are formed with holes localized in the GaAsSb close to the dot base; two segments at opposite sides of the dot, forming molecular-like states, result from the piezoelectric field. We also propose an experiment that could be used to identify the hole localization using a vertical electric field.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2012-09-27T14:07:24.000Z"
    }
  ],
  "analyses": {
    "subjects": [
      "71.20.Nr",
      "78.55.Cr",
      "71.15.-m"
    ],
    "keywords": [
      "inas quantum dots",
      "gaassb strain reducing layer",
      "electronic structure",
      "optical properties",
      "localization"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "publisher": "AIP",
      "journal": "Applied Physics Letters",
      "year": 2010,
      "month": "Nov",
      "volume": 97,
      "number": 20,
      "pages": 203107
    },
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2010ApPhL..97t3107K"
    }
  }
}