{
  "id": "1207.7243",
  "version": "v2",
  "published": "2012-07-31T13:46:52.000Z",
  "updated": "2012-08-02T12:15:54.000Z",
  "title": "Gate-Control of Spin Precession in Quantum Hall Edge States",
  "authors": [
    "T. Nakajima",
    "Kuan-Ting Lin",
    "S. Komiyama"
  ],
  "categories": [
    "cond-mat.mes-hall",
    "quant-ph"
  ],
  "abstract": "Electrical control and detection of spin precession are experimentally demonstrated by using spin-resolved edge states in the integer quantum Hall regime. Spin precession is triggered at a corner of a biased metal gate, where electron orbital motion makes a sharp turn leading to a nonadiabatic change in the effective magnetic field via spin-orbit interaction. The phase of precession is controlled by the group velocity of edge-state electrons tuned by gate bias voltage: A spin-FET device is thus realized by all-electrical means, without invoking ferromagnetic material. The effect is also interpreted in terms of a Mach-Zehnder-type spin interferometer.",
  "revisions": [
    {
      "version": "v2",
      "updated": "2012-08-02T12:15:54.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "quantum hall edge states",
      "spin precession",
      "integer quantum hall regime",
      "gate-control",
      "electron orbital motion"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2012arXiv1207.7243N"
    }
  }
}