{
  "id": "1205.0408",
  "version": "v1",
  "published": "2012-05-02T12:40:39.000Z",
  "updated": "2012-05-02T12:40:39.000Z",
  "title": "Wetting layer evolution and its temperature dependence during self assembly of InAs/GaAs quantum dots",
  "authors": [
    "Hongyi Zhang",
    "Yonghai Chen",
    "Guanyu Zhou",
    "Chenguang Tang",
    "Zhanguo Wang"
  ],
  "comment": "13 pages, 3 figures",
  "journal": "Nanoscale Research Letters 2012, 7:600",
  "doi": "10.1186/1556-276X-7-600",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "For InAs/GaAs(001) quantum dot (QD) system, the wetting layer (WL) evolution and its temperature dependence were studied using reflectance difference spectroscopy (RDS) and analyzed with a rate equation model. The WL thicknesses showed a monotonic increase at relatively low growth temperatures but a first increase and then decrease at higher temperatures, which were unexpected from the thermodynamic understanding. By adopting a rate equation model, the temperature dependence of QD growth was assigned as the origin of different WL evolutions. A brief discussion on the indium desorption was also given. Those results gave hints of the kinetic aspects of QD self-assembly.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2012-05-02T12:40:39.000Z"
    }
  ],
  "analyses": {
    "subjects": [
      "81.07.Ta",
      "81.05.Ea",
      "68.08.Bc",
      "68.35.Rh"
    ],
    "keywords": [
      "temperature dependence",
      "inas/gaas quantum dots",
      "wetting layer evolution",
      "rate equation model",
      "self assembly"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "journal": "Nanoscale Research Letters",
      "year": 2012,
      "month": "Oct",
      "volume": 7,
      "pages": 600
    },
    "note": {
      "typesetting": "TeX",
      "pages": 13,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2012NRL.....7..600Z"
    }
  }
}