{ "id": "1204.1144", "version": "v1", "published": "2012-04-05T08:19:31.000Z", "updated": "2012-04-05T08:19:31.000Z", "title": "Magnetoresistivity in a Tilted Magnetic Field in p-Si/SiGe/Si Heterostructures with an Anisotropic g-Factor: Part II", "authors": [ "I. L. Drichko", "I. Yu. Smirnov", "A. V. Suslov", "O. A. Mironov", "D. R. Leadley" ], "comment": "5 pages, 6 figures", "categories": [ "cond-mat.mes-hall" ], "abstract": "The magnetoresistance components $\\rho_{xx}$ and $\\rho_{xy}$ were measured in two p-Si/SiGe/Si quantum wells that have an anisotropic g-factor in a tilted magnetic field as a function of temperature, field and tilt angle. Activation energy measurements demonstrate the existence of a ferromagnetic-paramagnetic (F-P) transition for a sample with a hole density of $p$=2$\\times10^{11}$\\,cm$^{-2}$. This transition is due to crossing of the 0$\\uparrow$ and 1$\\downarrow$ Landau levels. However, in another sample, with $p$=7.2$\\times10^{10}$\\,cm$^{-2}$, the 0$\\uparrow$ and 1$\\downarrow$ Landau levels coincide for angles $\\Theta$=0-70$^{\\text{o}}$. Only for $\\Theta$ > 70$^{\\text{o}}$ do the levels start to diverge which, in turn, results in the energy gap opening.", "revisions": [ { "version": "v1", "updated": "2012-04-05T08:19:31.000Z" } ], "analyses": { "keywords": [ "tilted magnetic field", "anisotropic g-factor", "p-si/sige/si heterostructures", "activation energy measurements demonstrate", "magnetoresistivity" ], "tags": [ "journal article" ], "publication": { "doi": "10.1134/S1063776112080067", "journal": "Soviet Journal of Experimental and Theoretical Physics", "year": 2012, "month": "Sep", "volume": 115, "number": 3, "pages": 480 }, "note": { "typesetting": "TeX", "pages": 5, "language": "en", "license": "arXiv", "status": "editable", "adsabs": "2012JETP..115..480D" } } }