{
  "id": "1203.3379",
  "version": "v2",
  "published": "2012-03-15T14:58:54.000Z",
  "updated": "2012-04-03T11:31:03.000Z",
  "title": "Topo-electronic transitions in Sb(111) nanofilm: the interplay between quantum confinement and surface effect",
  "authors": [
    "PengFei Zhang",
    "Zheng Liu",
    "Wenhui Duan",
    "Feng Liu",
    "Jian Wu"
  ],
  "comment": "4 pages, 4 figures",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "When the dimension of a solid structure is reduced, there will be two emerging effects, quantum confinement and surface effect, which dominate at nanoscale. Based on first-principles calculations, we demonstrate that due to an intriguing interplay between these two dominating effects, the topological and electronic (topo-electronic) properties of Sb (111) nanofilms undergo a series of transitions as a function of the reducing film thickness: transforming from a topological semimetal to a topological insulator at 7.8 nm (22 bilayer), then to a quantum spin hall (QSH) phase at 2.7 nm (8 bilayer), and finally to a normal (topological trivial) semiconductor at 1.0 nm (3 bilayer). Our theoretical findings for the first time identify the existence of the QSH in the Sb (111) nanofilms within a narrow range of thickness and suggest that the Sb (111) nanofilms provide an ideal test bed for experimental study of topo-electronic phase transitions.",
  "revisions": [
    {
      "version": "v2",
      "updated": "2012-04-03T11:31:03.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "quantum confinement",
      "surface effect",
      "topo-electronic transitions",
      "topo-electronic phase transitions",
      "quantum spin hall"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 4,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2012arXiv1203.3379Z"
    }
  }
}