{
  "id": "1203.1386",
  "version": "v1",
  "published": "2012-03-07T06:13:02.000Z",
  "updated": "2012-03-07T06:13:02.000Z",
  "title": "Probing and modelling the localized self-mixing in a GaN/AlGaN field-effect terahertz detector",
  "authors": [
    "J. D. Sun",
    "H. Qin",
    "R. A. Lewis",
    "Y. F. Sun",
    "X. Y. Zhang",
    "Y. Cai",
    "D. M. Wu",
    "B. S. Zhang"
  ],
  "comment": "12 pages, 4 figures, submitted to APL",
  "categories": [
    "cond-mat.mes-hall",
    "physics.optics"
  ],
  "abstract": "In a GaN/AlGaN field-effect terahertz detector, the directional photocurrent is mapped in the two-dimensional space of the gate voltage and the drain/source bias. It is found that not only the magnitude, but also the polarity, of the photocurrent can be tuned. A quasistatic self-mixing model taking into account the localized terahertz field provides a quantitative description of the detector characteristics. Strongly localized self-mixing is confirmed. It is therefore important to engineer the spatial distribution of the terahertz field and its coupling to the field-effect channel on the sub-micron scale.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2012-03-07T06:13:02.000Z"
    }
  ],
  "analyses": {
    "subjects": [
      "85.30.Tv",
      "84.40.Ba",
      "07.57.Pt"
    ],
    "keywords": [
      "gan/algan field-effect terahertz detector",
      "localized self-mixing",
      "gate voltage",
      "drain/source bias",
      "directional photocurrent"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "doi": "10.1063/1.4705306",
      "journal": "Applied Physics Letters",
      "year": 2012,
      "month": "Apr",
      "volume": 100,
      "number": 17,
      "pages": 173513
    },
    "note": {
      "typesetting": "TeX",
      "pages": 12,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2012ApPhL.100q3513S"
    }
  }
}