{
  "id": "1202.3016",
  "version": "v1",
  "published": "2012-02-14T12:24:14.000Z",
  "updated": "2012-02-14T12:24:14.000Z",
  "title": "Long spin relaxation times in wafer scale epitaxial graphene on SiC(0001)",
  "authors": [
    "T. Maassen",
    "J. J. van den Berg",
    "N. IJbema",
    "F. Fromm",
    "T. Seyller",
    "R. Yakimova",
    "B. J. van Wees"
  ],
  "comment": "16 pages, 3 figures, 1 table",
  "journal": "Nano Letters 2012",
  "doi": "10.1021/nl2042497",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We developed an easy, upscalable process to prepare lateral spin-valve devices on epitaxially grown monolayer graphene on SiC(0001) and perform nonlocal spin transport measurements. We observe the longest spin relaxation times tau_S in monolayer graphene, while the spin diffusion coefficient D_S is strongly reduced compared to typical results on exfoliated graphene. The increase of tau_S is probably related to the changed substrate, while the cause for the small value of D_S remains an open question.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2012-02-14T12:24:14.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "wafer scale epitaxial graphene",
      "long spin relaxation times",
      "perform nonlocal spin transport measurements",
      "longest spin relaxation times"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "journal": "Nano Letters",
      "year": 2012,
      "month": "Mar",
      "volume": 12,
      "number": 3,
      "pages": 1498
    },
    "note": {
      "typesetting": "TeX",
      "pages": 16,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2012NanoL..12.1498M"
    }
  }
}