{ "id": "1202.1753", "version": "v2", "published": "2012-02-08T16:22:35.000Z", "updated": "2012-03-28T12:18:00.000Z", "title": "Transport Gap in Suspended Bilayer Graphene at Zero Magnetic Field", "authors": [ "A. Veligura", "H. J. van Elferen", "N. Tombros", "J. C. Maan", "U. Zeitler", "B. J. van Wees" ], "comment": "8 pages, 5 figures", "journal": "Rhys. Rev. B (2012)", "doi": "10.1103/PhysRevB.85.155412", "categories": [ "cond-mat.mes-hall" ], "abstract": "We report a change of three orders of magnitudes in the resistance of a suspended bilayer graphene flake which varies from a few k$\\Omega$s in the high carrier density regime to several M$\\Omega$s around the charge neutrality point (CNP). The corresponding transport gap is 8 meV at 0.3 K. The sequence of appearing quantum Hall plateaus at filling factor $\\nu=2$ followed by $\\nu=1$ suggests that the observed gap is caused by the symmetry breaking of the lowest Landau level. Investigation of the gap in a tilted magnetic field indicates that the resistance at the CNP shows a weak linear decrease for increasing total magnetic field. Those observations are in agreement with a spontaneous valley splitting at zero magnetic field followed by splitting of the spins originating from different valleys with increasing magnetic field. Both, the transport gap and $B$ field response point toward spin polarized layer antiferromagnetic state as a ground state in the bilayer graphene sample. The observed non-trivial dependence of the gap value on the normal component of $B$ suggests possible exchange mechanisms in the system.", "revisions": [ { "version": "v2", "updated": "2012-03-28T12:18:00.000Z" } ], "analyses": { "subjects": [ "73.22.Pr", "72.80.Vp", "73.43.Qt", "85.30.Tv" ], "keywords": [ "zero magnetic field", "transport gap", "high carrier density regime", "spin polarized layer antiferromagnetic state", "suspended bilayer graphene flake" ], "tags": [ "journal article" ], "publication": { "publisher": "APS", "journal": "Physical Review B", "year": 2012, "month": "Apr", "volume": 85, "number": 15, "pages": 155412 }, "note": { "typesetting": "TeX", "pages": 8, "language": "en", "license": "arXiv", "status": "editable", "adsabs": "2012PhRvB..85o5412V" } } }