{
  "id": "1112.1798",
  "version": "v1",
  "published": "2011-12-08T10:02:10.000Z",
  "updated": "2011-12-08T10:02:10.000Z",
  "title": "Spintronic devices on the base of magnetic nanostructures",
  "authors": [
    "L. V. Lutsev",
    "A. I. Stognij",
    "N. N. Novitskii",
    "A. S. Shulenkov"
  ],
  "comment": "6 pages, 4 figures",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "Two types of spintronic devices on the base of magnetic nanostructures containing silicon dioxide films with cobalt nanoparticles SiO2(Co) on GaAs substrate - magnetic sensors and field-effect transistor governed by applied magnetic field - are studied. Magnetic sensors are based on the injection magnetoresistance effect. This effect manifests itself in avalanche suppression by the magnetic field in GaAs near the SiO2(Co)/GaAs interface. Field-effect transistor contains the SiO2(Co) film under gate. It is found that the magnetic field action leads to great changes in electron mobility in the channel due to the interaction between spins of Co nanoparticles and electron spins.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2011-12-08T10:02:10.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "spintronic devices",
      "field-effect transistor",
      "magnetic sensors",
      "magnetic nanostructures containing silicon dioxide",
      "nanostructures containing silicon dioxide films"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 6,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2011arXiv1112.1798L"
    }
  }
}