{ "id": "1111.0675", "version": "v3", "published": "2011-11-02T21:57:29.000Z", "updated": "2012-05-17T08:50:42.000Z", "title": "Proposal for a Datta-Das transistor in the quantum Hall regime", "authors": [ "Luca Chirolli", "D. Venturelli", "F. Taddei", "Rosario Fazio", "V. Giovannetti" ], "comment": "6 pages, 5 figures", "journal": "Physical Review B 85, 155317 (2012)", "doi": "10.1103/PhysRevB.85.155317", "categories": [ "cond-mat.mes-hall", "quant-ph" ], "abstract": "We propose a resonant spin-field-effect transistor for chiral spin-resolved edge states in the integer quantum Hall effect with Rashba spin-orbit interaction. It employs a periodic array of voltage-controlled top gates that locally modulate the Rashba spin-orbit interaction. Strong resonant spin-field effect is achieved when the array periodicity matches the inverse of the wave-vector difference of the two chiral states involved. Well-known techniques of separately contacting the edge states make it possible to selectively populate and read out the edge states, allowing full spin readout. The resonant nature of the spin-field effect and the adiabatic character of the edge states guarantee a high degree of robustness with respect to disorder. Our device represents the quantum Hall version of the all-electrical Datta-Das spin-field effect transistor.", "revisions": [ { "version": "v3", "updated": "2012-05-17T08:50:42.000Z" } ], "analyses": { "subjects": [ "73.43.-f", "03.67.-a", "71.70.Ej", "85.75.-d" ], "keywords": [ "quantum hall regime", "datta-das transistor", "edge states", "rashba spin-orbit interaction", "strong resonant spin-field effect" ], "tags": [ "journal article" ], "publication": { "publisher": "APS", "journal": "Physical Review B", "year": 2012, "month": "Apr", "volume": 85, "number": 15, "pages": 155317 }, "note": { "typesetting": "TeX", "pages": 6, "language": "en", "license": "arXiv", "status": "editable", "adsabs": "2012PhRvB..85o5317C" } } }