{
  "id": "1110.1140",
  "version": "v2",
  "published": "2011-10-06T02:44:29.000Z",
  "updated": "2011-10-11T22:47:01.000Z",
  "title": "Carrier Transport in Heterojunction Nanocrystals Under Strain",
  "authors": [
    "Mark C. Sweeney",
    "Joel D. Eaves"
  ],
  "comment": "This paper has been withdrawn by the author pending journal review",
  "journal": "J. Phys. Chem. Lett., 3, 791 (2012)",
  "doi": "10.1021/jz201368e",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We present a theory for carrier transport in semiconducting nanoscale heterostructures that emphasizes the effects of strain at the interface between two different crystal structures. An exactly solvable model shows that the interface region, or junction, acts as a scattering potential that facilitates charge separation but also supports bound interfacial states. As a case study, we model a Type-II CdS/ZnSe heterostructure. After advancing a theory similar to that employed in model molecular conductance calculations, we calculate the electron and hole photocurrents and conductances, including non-linear effects, through the junction at steady-state.",
  "revisions": [
    {
      "version": "v2",
      "updated": "2011-10-11T22:47:01.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "carrier transport",
      "heterojunction nanocrystals",
      "model molecular conductance calculations",
      "supports bound interfacial states",
      "type-ii cds/znse heterostructure"
    ],
    "tags": [
      "journal article"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2011arXiv1110.1140S"
    }
  }
}