{ "id": "1110.0604", "version": "v2", "published": "2011-10-04T08:38:51.000Z", "updated": "2011-11-22T10:36:51.000Z", "title": "Role of covalent and metallic intercalation on the electronic properties of epitaxial graphene on SiC(0001)", "authors": [ "I. Deretzis", "A. La Magna" ], "comment": "6 pages, 4 figures, accepted in PRB", "journal": "Phys. Rev. B 84, 235426 (2011)", "doi": "10.1103/PhysRevB.84.235426", "categories": [ "cond-mat.mes-hall", "cond-mat.mtrl-sci" ], "abstract": "We present an orbital-resolved density functional theory study on the electronic properties of hydrogen and lithium intercalated graphene grown on the Si face of SiC. Starting from the $(6\\sqrt3\\times6\\sqrt3)R30^{\\circ}$ surface reconstruction of the graphene/SiC heterosystem, we find that both H and Li can restore the ideal structural characteristics of the two nonequivalent junction parts (i.e. graphene and the SiC substrate) when inserted at the interface. However, the chemical/electrostatic interactions remain different for the two cases. Hence, H-intercalated epitaxial graphene is subject to a sublattice symmetry-breaking electronic interference that perturbs the Dirac point, whereas Li intercalation gives rise to a highly $n$-doped system due to a nonuniform delocalization of Li charges. Results bring to discussion the role of substrate engineering in epitaxial graphene on SiC.", "revisions": [ { "version": "v2", "updated": "2011-11-22T10:36:51.000Z" } ], "analyses": { "subjects": [ "81.05.ue", "73.22.Pr" ], "keywords": [ "epitaxial graphene", "electronic properties", "metallic intercalation", "orbital-resolved density functional theory study", "lithium intercalated graphene grown" ], "tags": [ "journal article" ], "publication": { "publisher": "APS", "journal": "Physical Review B", "year": 2011, "month": "Dec", "volume": 84, "number": 23, "pages": 235426 }, "note": { "typesetting": "TeX", "pages": 6, "language": "en", "license": "arXiv", "status": "editable", "adsabs": "2011PhRvB..84w5426D" } } }