{
  "id": "1109.5097",
  "version": "v1",
  "published": "2011-09-23T14:53:46.000Z",
  "updated": "2011-09-23T14:53:46.000Z",
  "title": "Spin-Orbit Engineering of Semiconductor Heterostructures",
  "authors": [
    "Federico Bottegoni",
    "Henri-Jean Drouhin",
    "Guy Fishman",
    "Jean-Eric Wegrowe"
  ],
  "comment": "23 pages",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We present a systematic construction of the probability-current operator,based on a momentum power expansion of effective Hamiltonians. The result is valid in the presence of a Rashba term and when a D'yakonov--Perel contribution is included. We propose practical tools for spin-orbit engineering of semiconductor heterostructures. We apply this formalism to a paradigmatic system, the interface between two semi-infinite media, on one side a free-electron-like material and on the other side a barrier material with spin-orbit interaction. We show that the usual boundary conditions, namely the continuity of the envelope function and of a velocity at the interface, according to the BenDaniel-Duke approach, comply with the conservation of the probability current only when first- (Rashba-like) and second-order (free-electron-like) terms are taken into account in the Hamiltonian. We revisit the boundary conditions and we prove that the envelope function may be discontinuous at the interface.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2011-09-23T14:53:46.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "semiconductor heterostructures",
      "spin-orbit engineering",
      "envelope function",
      "usual boundary conditions",
      "momentum power expansion"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 23,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2011arXiv1109.5097B"
    }
  }
}