{ "id": "1109.2660", "version": "v1", "published": "2011-09-13T01:46:39.000Z", "updated": "2011-09-13T01:46:39.000Z", "title": "Ultra-low carrier concentration and surface dominant transport in Sb-doped Bi2Se3 topological insulator nanoribbons", "authors": [ "Seung Sae Hong", "Judy J. Cha", "Desheng Kong", "Yi Cui" ], "comment": "5 pages, 4 figures, 1 table", "journal": "Nature Communications 3, 757 (2012)", "doi": "10.1038/ncomms1771", "categories": [ "cond-mat.mes-hall", "cond-mat.mtrl-sci" ], "abstract": "A topological insulator is a new state of matter, possessing gapless spin-locking surface states across the bulk band gap which has created new opportunities from novel electronics to energy conversion. However, the large concentration of bulk residual carriers has been a major challenge for revealing the property of the topological surface state via electron transport measurement. Here we report surface state dominated transport in Sb-doped Bi2Se3 nanoribbons with very low bulk electron concentrations. In the nanoribbons with sub-10nm thickness protected by a ZnO layer, we demonstrate complete control of their top and bottom surfaces near the Dirac point, achieving the lowest carrier concentration of 2x10^11/cm2 reported in three-dimensional (3D) topological insulators. The Sb-doped Bi2Se3 nanostructures provide an attractive materials platform to study fundamental physics in topological insulators, as well as future applications.", "revisions": [ { "version": "v1", "updated": "2011-09-13T01:46:39.000Z" } ], "analyses": { "keywords": [ "sb-doped bi2se3 topological insulator nanoribbons", "ultra-low carrier concentration", "surface dominant transport", "surface state dominated transport" ], "tags": [ "journal article" ], "publication": { "journal": "Nature Communications", "year": 2012, "month": "Mar", "volume": 3, "pages": 757 }, "note": { "typesetting": "TeX", "pages": 5, "language": "en", "license": "arXiv", "status": "editable", "adsabs": "2012NatCo...3E.757H" } } }