{
  "id": "1107.0075",
  "version": "v1",
  "published": "2011-06-30T22:03:03.000Z",
  "updated": "2011-06-30T22:03:03.000Z",
  "title": "Electronic structure of silicon-based nanostructures",
  "authors": [
    "G. G. Guzmán-Verri",
    "L. C. Lew Yan Voon"
  ],
  "comment": "12 pages, 6 Figures",
  "journal": "Phys. Rev. B 76, 075131 (2007)",
  "doi": "10.1103/PhysRevB.76.075131",
  "categories": [
    "cond-mat.mes-hall",
    "cond-mat.mtrl-sci"
  ],
  "abstract": "We have developed an unifying tight-binding Hamiltonian that can account for the electronic properties of recently proposed Si-based nanostructures, namely, Si graphene-like sheets and Si nanotubes. We considered the $sp^3s^*$ and $sp^{3}$ models up to first- and second-nearest neighbors, respectively. Our results show that the Si graphene-like sheets considered here are metals or zero-gap semiconductors, and that the corresponding Si nanotubes follow the so-called Hamada's rule [Phys. Rev. Lett. {\\bf 68}, 1579 1992]. Comparison to a recent {\\it ab initio} calculation is made.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2011-06-30T22:03:03.000Z"
    }
  ],
  "analyses": {
    "subjects": [
      "73.21.La",
      "02.60.Cb"
    ],
    "keywords": [
      "electronic structure",
      "silicon-based nanostructures",
      "si graphene-like sheets",
      "electronic properties",
      "second-nearest neighbors"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "publisher": "APS",
      "journal": "Physical Review B",
      "year": 2007,
      "month": "Aug",
      "volume": 76,
      "number": 7,
      "pages": "075131"
    },
    "note": {
      "typesetting": "TeX",
      "pages": 12,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2007PhRvB..76g5131G"
    }
  }
}