{
  "id": "1106.4418",
  "version": "v1",
  "published": "2011-06-22T11:19:44.000Z",
  "updated": "2011-06-22T11:19:44.000Z",
  "title": "The stability of the fractional quantum Hall effect in topological insulators",
  "authors": [
    "Ashley M. DaSilva"
  ],
  "comment": "8 pages, 2 figures",
  "journal": "Solid State Communications 151, 1444 (2011)",
  "doi": "10.1016/j.ssc.2011.07.001",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "With the recent observation of graphene-like Landau levels at the surface of topological insulators, the possibility of fractional quantum Hall effect, which is a fundamental signature of strong correlations, has become of interest. Some experiments have reported intra-Landau level structure that is suggestive of fractional quantum Hall effect. This paper discusses the feasibility of fractional quantum Hall effect from a theoretical perspective, and argues that while this effect should occur, ideally, in the $n=0$ and $|n|=1$ Landau levels, it is ruled out in higher $|n|$ Landau levels. Unlike graphene, the fractional quantum Hall effect in topological insulators is predicted to show an interesting asymmetry between $n=1$ and $n=-1$ Landau levels due to spin-orbit coupling.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2011-06-22T11:19:44.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "fractional quantum hall effect",
      "topological insulators",
      "reported intra-landau level structure",
      "graphene-like landau levels",
      "fundamental signature"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "journal": "Solid State Communications",
      "year": 2011,
      "month": "Oct",
      "volume": 151,
      "number": 20,
      "pages": 1444
    },
    "note": {
      "typesetting": "TeX",
      "pages": 8,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2011SSCom.151.1444D"
    }
  }
}