{
  "id": "1104.3569",
  "version": "v1",
  "published": "2011-04-18T19:28:30.000Z",
  "updated": "2011-04-18T19:28:30.000Z",
  "title": "Temperature dependence of the resistance switching effect studied on the metal/YBa2Cu3O6+x planar junctions",
  "authors": [
    "Milan Tomasek",
    "Tomas Plecenik",
    "Martin Truchly",
    "Jaroslav Noskovic",
    "Tomas Roch",
    "Miroslav Zahoran",
    "Stefan Chromik",
    "Mariana Spankova",
    "Peter Kus",
    "Andrej Plecenik"
  ],
  "comment": "13 pages, 5 figures",
  "journal": "J. Vac. Sci. Technol. B 29, 01AD04 (2011)",
  "doi": "10.1116/1.3521408",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "Resistive switching (RS) effect observed in capacitor-like metal/insulator/metal junctions belongs to the most promising candidates for next generation of memory cell technology. It is based upon a sudden change of the junction resistance caused by an electric field applied to the metal electrodes. The aim of this work was to study this effect on the structure metal/YBCO6/YBCO7, where YBCO7 is a metallic phase and YBCO6 is an insulator phase which arises spontaneously by out-diffusion of oxygen from a few nanometers wide YBCO surface layer. Oriented YBa2Cu3O7 thin films were prepared by the method of magnetron sputtering and consequently planar structures with metal-YBCO junction were made by the means of the optical lithography, ion etching and vacuum evaporation. On these junctions we have studied the temperature dependence of the RS effect with I-V and dI/dV-V transport measurements down to liquid He temperature. We have determined temperature dependence of the RS effect threshold voltage in the temperature range 100-300 K and showed that this dependency is compatible with common idea of oxygen ions migration under electric field within the YBCO surface layer.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2011-04-18T19:28:30.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "temperature dependence",
      "resistance switching effect",
      "planar junctions",
      "nanometers wide ybco surface layer",
      "rs effect threshold voltage"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "journal": "Journal of Vacuum Science Technology B: Microelectronics and Nanometer Structures",
      "year": 2011,
      "volume": 29,
      "number": 1
    },
    "note": {
      "typesetting": "TeX",
      "pages": 13,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2011JVSTB..29aAD04T"
    }
  }
}