{ "id": "1104.1072", "version": "v1", "published": "2011-04-06T12:11:02.000Z", "updated": "2011-04-06T12:11:02.000Z", "title": "Improved tunneling magnetoresistance at low temperature in manganite junctions grown by molecular beam epitaxy", "authors": [ "Robert Werner", "Alexandr Yu. Petrov", "Lucero Alvarez Mino", "Reinhold Kleiner", "Dieter Koelle", "Bruce A. Davidson" ], "comment": "6 pages, 7 figures; accepted in Applied Physics Letters", "categories": [ "cond-mat.mes-hall", "cond-mat.mtrl-sci" ], "abstract": "We report resistance versus magnetic field measurements for a La0.65Sr0.35MnO3/SrTiO3/La0.65Sr0.35MnO3 tunnel junction grown by molecular-beam epitaxy, that show a large field window of extremely high tunneling magnetoresistance (TMR) at low temperature. Scanning the in-plane applied field orientation through 360^/circ, the TMR shows 4-fold symmetry, i.e. biaxial anisotropy, aligned with the crystalline axes but not the junction geometrical long axis. The TMR reaches ~ 1900% at 4K, corresponding to an interfacial spin polarization of > 95% assuming identical interfaces. These results show that uniaxial anisotropy is not necessary for large TMR, and lay the groundwork for future improvements in TMR in manganite junctions.", "revisions": [ { "version": "v1", "updated": "2011-04-06T12:11:02.000Z" } ], "analyses": { "keywords": [ "molecular beam epitaxy", "manganite junctions grown", "low temperature", "tunneling magnetoresistance", "35mno3 tunnel junction grown" ], "tags": [ "journal article" ], "publication": { "doi": "10.1063/1.3581885", "journal": "Applied Physics Letters", "year": 2011, "month": "Apr", "volume": 98, "number": 16, "pages": 162505 }, "note": { "typesetting": "TeX", "pages": 6, "language": "en", "license": "arXiv", "status": "editable", "adsabs": "2011ApPhL..98p2505W" } } }