{
  "id": "1103.4102",
  "version": "v4",
  "published": "2011-03-21T18:35:47.000Z",
  "updated": "2011-08-24T16:25:50.000Z",
  "title": "Electron-phonon interaction effects on the direct gap transitions of nanoscale Si films",
  "authors": [
    "Vimal K Kamineni",
    "Alain C Diebold"
  ],
  "comment": "15 pages, 4 Figure, Appl. Phys. Lett",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "This study shows that the dielectric function of crystalline Si quantum wells (c-Si QW) is influenced by both carrier confinement and electron-phonon interactions. The energy shifts and lifetime broadening of the excitonic E1 direct gap transition of c-Si QWs from 2 to 10 nm are found to have a significant dimensional and temperature dependence that can be traced to changes in the phonon dispersion of nanoscale films. The influence of electron-phonon interactions on the dielectric function was verified by altering the phonon dispersion using different dielectric layers above a 5 nm c-Si QW.",
  "revisions": [
    {
      "version": "v4",
      "updated": "2011-08-24T16:25:50.000Z"
    }
  ],
  "analyses": {
    "subjects": [
      "81.07.St",
      "73.63.Hs",
      "63.22.Np",
      "63.20.kd",
      "81.05.Cy",
      "77.22.Ch"
    ],
    "keywords": [
      "electron-phonon interaction effects",
      "nanoscale si films",
      "c-si qw",
      "excitonic e1 direct gap transition",
      "crystalline si quantum wells"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "doi": "10.1063/1.3650470",
      "journal": "Applied Physics Letters",
      "year": 2011,
      "month": "Oct",
      "volume": 99,
      "number": 15,
      "pages": 151903
    },
    "note": {
      "typesetting": "TeX",
      "pages": 15,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2011ApPhL..99o1903K"
    }
  }
}