{
  "id": "1103.2895",
  "version": "v2",
  "published": "2011-03-15T12:50:25.000Z",
  "updated": "2011-07-08T01:45:13.000Z",
  "title": "Spin filling of valley-orbit states in a silicon quantum dot",
  "authors": [
    "W. H. Lim",
    "C. H. Yang",
    "F. A. Zwanenburg",
    "A. S. Dzurak"
  ],
  "comment": "6 pages, 4 figures, to appear in Nanotechnology",
  "journal": "Nanotechnology 22, 335704 (2011)",
  "doi": "10.1088/0957-4484/22/33/335704",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We report the demonstration of a low-disorder silicon metal-oxide-semiconductor (Si MOS) quantum dot containing a tunable number of electrons from zero to N=27. The observed evolution of addition energies with parallel magnetic field reveals the spin filling of electrons into valley-orbit states. We find a splitting of 0.10 meV between the ground and first excited states, consistent with theory and placing a lower bound on the valley splitting. Our results provide optimism for the realization in the near future of spin qubits based on silicon quantum dots.",
  "revisions": [
    {
      "version": "v2",
      "updated": "2011-07-08T01:45:13.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "silicon quantum dot",
      "valley-orbit states",
      "spin filling",
      "parallel magnetic field",
      "low-disorder silicon metal-oxide-semiconductor"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "journal": "Nanotechnology",
      "year": 2011,
      "month": "Aug",
      "volume": 22,
      "number": 33,
      "pages": 335704
    },
    "note": {
      "typesetting": "TeX",
      "pages": 6,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2011Nanot..22G5704L"
    }
  }
}