{
  "id": "1102.5506",
  "version": "v1",
  "published": "2011-02-27T13:54:30.000Z",
  "updated": "2011-02-27T13:54:30.000Z",
  "title": "Quantum criticality in a Mott pn-junction in an armchair carbon nanotube",
  "authors": [
    "Wei Chen",
    "A. V. Andreev",
    "L. I. Glazman"
  ],
  "comment": "5 pages, 1 figure",
  "journal": "Phys. Rev. Lett. 106, 216801 (2011)",
  "doi": "10.1103/PhysRevLett.106.216801",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "In an armchair carbon nanotube pn junction the p- and n- regions are separated by a region of a Mott insulator, which can backscatter electrons only in pairs. We predict a quantum-critical behavior in such a pn junction. Depending on the junction's built-in electric field E, its conductance G scales either to zero or to the ideal value G=4e^2/h as the temperature T is lowered. The two types of the G(T) dependence indicate the existence, at some special value of E, of an intermediate quantum critical point with a finite conductance G<4e^2/h. This makes the pn junction drastically different from a simple barrier in a Luttinger liquid.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2011-02-27T13:54:30.000Z"
    }
  ],
  "analyses": {
    "subjects": [
      "73.23.-b",
      "64.70.Tg",
      "71.10.Pm",
      "85.35.Kt"
    ],
    "keywords": [
      "quantum criticality",
      "mott pn-junction",
      "armchair carbon nanotube pn junction",
      "junctions built-in electric field",
      "intermediate quantum critical point"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "publisher": "APS",
      "journal": "Physical Review Letters",
      "year": 2011,
      "month": "May",
      "volume": 106,
      "number": 21,
      "pages": 216801
    },
    "note": {
      "typesetting": "TeX",
      "pages": 5,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2011PhRvL.106u6801C"
    }
  }
}