{ "id": "1102.4753", "version": "v1", "published": "2011-02-23T14:39:44.000Z", "updated": "2011-02-23T14:39:44.000Z", "title": "Spin relaxation near the metal-insulator transition: dominance of the Dresselhaus spin-orbit coupling", "authors": [ "Guido A. Intronati", "Pablo I. Tamborenea", "Dietmar Weinmann", "Rodolfo A. Jalabert" ], "comment": "4 pages, 2 figures, submitted to Phys. Rev. Lett", "journal": "Phys. Rev. Lett. 108, 016601 (2012)", "doi": "10.1103/PhysRevLett.108.016601", "categories": [ "cond-mat.mes-hall" ], "abstract": "We identify the Dresselhaus spin-orbit coupling as the source of the dominant spin-relaxation mechanism in the impurity band of doped semiconductors. The Dresselhaus-type (i.e. allowed by bulk-inversion asymmetry) hopping terms are derived and incorporated into a tight-binding model of impurity sites, and they are shown to unexpectedly dominate the spin relaxation, leading to spin-relaxation times in good agreement with experimental values. This conclusion is drawn from two complementary approaches employed to extract the spin-relaxation time from the effective Hamiltonian: an analytical diffusive-evolution calculation and a numerical finite-size scaling.", "revisions": [ { "version": "v1", "updated": "2011-02-23T14:39:44.000Z" } ], "analyses": { "subjects": [ "72.25.Rb", "03.67.-a", "72.20.Ee", "76.30.Pk" ], "keywords": [ "dresselhaus spin-orbit coupling", "spin relaxation", "metal-insulator transition", "spin-relaxation time", "dominant spin-relaxation mechanism" ], "tags": [ "journal article" ], "publication": { "publisher": "APS", "journal": "Physical Review Letters", "year": 2012, "month": "Jan", "volume": 108, "number": 1, "pages": "016601" }, "note": { "typesetting": "TeX", "pages": 4, "language": "en", "license": "arXiv", "status": "editable", "adsabs": "2012PhRvL.108a6601I" } } }