{ "id": "1102.0265", "version": "v2", "published": "2011-02-01T20:27:13.000Z", "updated": "2011-07-04T19:53:32.000Z", "title": "Spin-Polarized to Valley-Polarized Transition in Graphene Bilayers at $ν=0$ in High Magnetic Fields", "authors": [ "Seyoung Kim", "Kayoung Lee", "Emanuel Tutuc" ], "comment": "5 pages, 5 figures", "journal": "Phys. Rev. Lett. 107, 016803 (2011)", "doi": "10.1103/PhysRevLett.107.016803", "categories": [ "cond-mat.mes-hall", "cond-mat.str-el" ], "abstract": "We investigate the transverse electric field ($E$) dependence of the $\\nu$=0 quantum Hall state (QHS) in dual-gated graphene bilayers in high magnetic fields. The longitudinal resistivity ($\\rho_{xx}$) measured at $\\nu$=0 shows an insulating behavior which is strongest in the vicinity of $E$=0, and at large $E$-fields. At a fixed perpendicular magnetic field ($B$), the $\\nu$=0 QHS undergoes a transition as a function of $E$, marked by a minimum, temperature-independent $\\rho_{xx}$. This observation is explained by a transition from a spin polarized $\\nu$=0 QHS at small $E$-fields, to a valley (layer) polarized $\\nu$=0 QHS at large $E$-fields. The $E$-field value at which the transition occurs has a linear dependence on $B$", "revisions": [ { "version": "v2", "updated": "2011-07-04T19:53:32.000Z" } ], "analyses": { "subjects": [ "73.21.-b", "73.22.Gk", "73.43.-f" ], "keywords": [ "high magnetic fields", "graphene bilayers", "valley-polarized transition", "quantum hall state", "transverse electric field" ], "tags": [ "journal article" ], "publication": { "publisher": "APS", "journal": "Physical Review Letters", "year": 2011, "month": "Jul", "volume": 107, "number": 1, "pages": "016803" }, "note": { "typesetting": "TeX", "pages": 5, "language": "en", "license": "arXiv", "status": "editable", "adsabs": "2011PhRvL.107a6803K" } } }