{
  "id": "1101.0299",
  "version": "v1",
  "published": "2010-12-31T21:00:25.000Z",
  "updated": "2010-12-31T21:00:25.000Z",
  "title": "Conductivity of graphene on boron nitride substrates",
  "authors": [
    "S. Das Sarma",
    "E. H. Hwang"
  ],
  "comment": "5 pages, 4 figures",
  "journal": "Phys. Rev. B 83, 121405(R) (2011)",
  "doi": "10.1103/PhysRevB.83.121405",
  "categories": [
    "cond-mat.mes-hall",
    "cond-mat.mtrl-sci"
  ],
  "abstract": "We calculate theoretically the disorder-limited conductivity of monolayer and bilayer graphene on hexagonal boron nitride (h-BN) substrates, comparing our theoretical results with the recent experimental results. The comparison leads to a direct quantitative estimate of the underlying disorder strength for both short-range and long-range disorder in the graphene on h-BN system. We find that the good interface quality between graphene and h-BN leads to strongly suppressed charged impurity scattering compared with the corresponding SiO$_2$ substrate case, thus producing very high mobility for the graphene on h-BN system.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2010-12-31T21:00:25.000Z"
    }
  ],
  "analyses": {
    "subjects": [
      "72.80.Vp",
      "81.05.ue",
      "72.10.-d",
      "73.22.Pr"
    ],
    "keywords": [
      "boron nitride substrates",
      "conductivity",
      "h-bn system",
      "suppressed charged impurity scattering"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "publisher": "APS",
      "journal": "Physical Review B",
      "year": 2011,
      "month": "Mar",
      "volume": 83,
      "number": 12,
      "pages": 121405
    },
    "note": {
      "typesetting": "TeX",
      "pages": 5,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2011PhRvB..83l1405D"
    }
  }
}