{
  "id": "1012.5716",
  "version": "v1",
  "published": "2010-12-28T08:14:28.000Z",
  "updated": "2010-12-28T08:14:28.000Z",
  "title": "Growth of quantum well films of topological insulator Bi2Se3 on insulating substrate",
  "authors": [
    "Cui-Zu Chang",
    "Ke He",
    "Min-Hao Liu",
    "Zuo-Cheng Zhang",
    "Xi Chen",
    "Li-Li Wang",
    "Xu-Cun Ma",
    "Ya-Yu Wang",
    "Qi-Kun Xue"
  ],
  "comment": "5 pages, 4 figures",
  "journal": "SPIN 1, 21-25(2011)",
  "doi": "10.1142/S2010324711000033",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "Insulating substrates are crucial for electrical transport study and room temperature application of topological insulator films at thickness of only several nanometers. High quality quantum well films of Bi2Se3, a typical three-dimensional topological insulator, have been grown on \\alpha-Al2O3 (sapphire) (0001) by molecular beam epitaxy. The films exhibit well-defined quantum well states and surface states, suggesting the uniform thickness over macroscopic area. The Bi2Se3 thin films on sapphire (0001) provide a good system to study low-dimensional physics of topological insulators since conduction contribution from the substrate is negligibly small.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2010-12-28T08:14:28.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "topological insulator bi2se3",
      "insulating substrate",
      "study low-dimensional physics",
      "room temperature application",
      "bi2se3 thin films"
    ],
    "tags": [
      "journal article"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 5,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2010arXiv1012.5716C"
    }
  }
}