{
  "id": "1011.3978",
  "version": "v1",
  "published": "2010-11-17T15:32:10.000Z",
  "updated": "2010-11-17T15:32:10.000Z",
  "title": "Strain determination in the Si channel above a single SiGe island inside a field effect transistor using nanobeam x-ray diffraction",
  "authors": [
    "N. Hrauda",
    "J. J. Zhang",
    "E. Wintersberger",
    "T. Etzelstorfer",
    "J. Stangl",
    "D. Carbone",
    "C. Biasotto",
    "V. Jovanovic",
    "L. K. Nanver",
    "J. Moers",
    "D. Grützmacher",
    "G. Bauer"
  ],
  "comment": "The following article has been submitted to Applied Physics Letters. After it is published, it will be found at http://apl.aip.org/",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "SiGe islands are used to induce tensile strain in the Si channel of Field Effect Transistors to achieve larger transconductance and higher current driveabilities. We report on x-ray diffraction experiments on a single fully-processed and functional device with a TiN+Al gate stack and source, gate, and drain contacts in place. The strain fields in the Si channel were explored using an x-ray beam focused to 400 nm diameter combined with finite element simulations. A maximum in-plane tensile strain of about 1% in the Si channel was found, which is by a factor of three to four higher than achievable for dislocation-free tensile strained Si in state-of-the-art devices.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2010-11-17T15:32:10.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "single sige island inside",
      "field effect transistor",
      "si channel",
      "nanobeam x-ray diffraction",
      "strain determination"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2010arXiv1011.3978H"
    }
  }
}