{
  "id": "1010.4679",
  "version": "v1",
  "published": "2010-10-22T11:35:03.000Z",
  "updated": "2010-10-22T11:35:03.000Z",
  "title": "Accessing the transport properties of graphene and its multi-layers at high carrier density",
  "authors": [
    "J. T. Ye",
    "M. F. Craciun",
    "M. Koshino",
    "S. Russo",
    "S. Inoue",
    "H. T. Yuan",
    "H. Shimotani",
    "A. F. Morpurgo",
    "Y. Iwasa"
  ],
  "comment": "4 figures, 4 pages",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We present a comparative study of high carrier density transport in mono-, bi-, and trilayer graphene using electric-double-layer transistors to continuously tune the carrier density up to values exceeding 10^{14} cm^{-2}. Whereas in monolayer the conductivity saturates, in bi- and trilayer flling of the higher energy bands is observed to cause a non-monotonic behavior of the conductivity, and a large increase in the quantum capacitance. These systematic trends not only show how the intrinsic high-density transport properties of graphene can be accessed by field-effect, but also demonstrate the robustness of ion-gated graphene, which is crucial for possible future applications.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2010-10-22T11:35:03.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "multi-layers",
      "high carrier density transport",
      "intrinsic high-density transport properties",
      "higher energy bands",
      "trilayer graphene"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 4,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2010arXiv1010.4679Y"
    }
  }
}