{
  "id": "1009.0076",
  "version": "v1",
  "published": "2010-09-01T02:35:48.000Z",
  "updated": "2010-09-01T02:35:48.000Z",
  "title": "Graphene field effect transistors with ferroelectric gating",
  "authors": [
    "Yi Zheng",
    "Guang-Xin Ni",
    "Chee-Tat Toh",
    "Chin-Yaw Tan",
    "Kui Yao",
    "Barbaros Ozyilmaz"
  ],
  "comment": "5 Pages; 4 figures; two column format",
  "journal": "Phys. Rev. Lett. 105, 166602 (2010)",
  "doi": "10.1103/PhysRevLett.105.166602",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "Recent experiments on ferroelectric gating have introduced a novel functionality, i.e. nonvolatility, in graphene field effect transistors. A comprehensive understanding in the non-linear, hysteretic ferroelectric gating and an effective way to control it are still absent. In this letter, we quantitatively characterize the hysteretic ferroelectric gating using the reference of an independent background doping (nBG) provided by normal dielectric gating. More importantly, we prove that nBG can be used to control the ferroelectric gating by unidirectionally shifting the hysteretic ferroelectric doping in graphene. Utilizing this electrostatic effect, we demonstrate symmetrical bit writing in graphene-ferroelectric FETs with resistance change over 500% and reproducible no-volatile switching over 10^5 cycles.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2010-09-01T02:35:48.000Z"
    }
  ],
  "analyses": {
    "subjects": [
      "72.80.Vp"
    ],
    "keywords": [
      "graphene field effect transistors",
      "hysteretic ferroelectric gating",
      "resistance change",
      "independent background",
      "normal dielectric"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "publisher": "APS",
      "journal": "Physical Review Letters",
      "year": 2010,
      "month": "Oct",
      "volume": 105,
      "number": 16,
      "pages": 166602
    },
    "note": {
      "typesetting": "TeX",
      "pages": 5,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2010PhRvL.105p6602Z"
    }
  }
}