{
  "id": "1007.4849",
  "version": "v2",
  "published": "2010-07-27T23:39:07.000Z",
  "updated": "2010-12-09T01:09:44.000Z",
  "title": "Few-electron quantum dots in III-V ternary alloys: role of fluctuations",
  "authors": [
    "G. Granger",
    "S. A. Studenikin",
    "A. Kam",
    "A. S. Sachrajda",
    "P. J. Poole"
  ],
  "comment": "3.3 pages, 3 figures. Added two new subfigures, new references, and improved the text",
  "journal": "Appl. Phys. Lett. 98 , 132107 (2011)",
  "doi": "10.1063/1.3574540",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We study experimentally the electron transport properties of gated quantum dots formed in InGaAs/InP and InAsP/InP quantum well structures grown by chemical-beam epitaxy. For the case of the InGaAs quantum well, quantum dots form directly underneath narrow gate electrodes due to potential fluctuations. We measure the Coulomb-blockade diamonds in the few-electron regime of a single quantum dot and observe photon-assisted tunneling peaks under microwave irradiation. A singlet-triplet transition at high magnetic field and Coulomb-blockade effects in the quantum Hall regime are also observed. For the InAsP quantum well, an incidental triple quantum dot forms also due to potential fluctuations within a single dot layout. Tunable quadruple points are observed via transport measurements.",
  "revisions": [
    {
      "version": "v2",
      "updated": "2010-12-09T01:09:44.000Z"
    }
  ],
  "analyses": {
    "subjects": [
      "73.63.Kv",
      "73.63.Hs",
      "73.43.Jn",
      "73.23.Hk"
    ],
    "keywords": [
      "iii-v ternary alloys",
      "few-electron quantum dots",
      "underneath narrow gate electrodes",
      "triple quantum dot forms",
      "form directly underneath narrow"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "journal": "Applied Physics Letters",
      "year": 2011,
      "month": "Mar",
      "volume": 98,
      "number": 13,
      "pages": 132107
    },
    "note": {
      "typesetting": "TeX",
      "pages": 3,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2011ApPhL..98m2107G"
    }
  }
}