{ "id": "1007.2733", "version": "v1", "published": "2010-07-16T10:23:45.000Z", "updated": "2010-07-16T10:23:45.000Z", "title": "Optical imaging of resonant electrical carrier injection into individual quantum dots", "authors": [ "A. Baumgartner", "E. Stock", "A. Patanè", "L. Eaves", "M. Henini", "D. Bimberg" ], "comment": "4 pages", "journal": "Phys. Rev. Lett. 105, 257401 (2010)", "doi": "10.1103/PhysRevLett.105.257401", "categories": [ "cond-mat.mes-hall" ], "abstract": "We image the micro-electroluminescence (EL) spectra of self-assembled InAs quantum dots (QDs) embedded in the intrinsic region of a GaAs p-i-n diode and demonstrate optical detection of resonant carrier injection into a single QD. Resonant tunneling of electrons and holes into the QDs at bias voltages below the flat-band condition leads to sharp EL lines characteristic of individual QDs, accompanied by a spatial fragmentation of the surface EL emission into small and discrete light- emitting areas, each with its own spectral fingerprint and Stark shift. We explain this behavior in terms of Coulomb interaction effects and the selective excitation of a small number of QDs within the ensemble due to preferential resonant tunneling paths for carriers.", "revisions": [ { "version": "v1", "updated": "2010-07-16T10:23:45.000Z" } ], "analyses": { "subjects": [ "78.67.Hc", "73.21.La", "73.63.-b", "78.60.Fi" ], "keywords": [ "resonant electrical carrier injection", "individual quantum dots", "optical imaging", "sharp el lines characteristic", "gaas p-i-n diode" ], "tags": [ "journal article" ], "publication": { "publisher": "APS", "journal": "Physical Review Letters", "year": 2010, "month": "Dec", "volume": 105, "number": 25, "pages": 257401 }, "note": { "typesetting": "TeX", "pages": 4, "language": "en", "license": "arXiv", "status": "editable", "adsabs": "2010PhRvL.105y7401B" } } }