{ "id": "1005.4917", "version": "v1", "published": "2010-05-26T19:36:00.000Z", "updated": "2010-05-26T19:36:00.000Z", "title": "Boron nitride substrates for high-quality graphene electronics", "authors": [ "C. R. Dean", "A. F. Young", "I. Meric", "C. Lee", "L. Wang", "S. Sorgenfrei", "K. Watanabe", "T. Taniguchi", "P. Kim", "K. L. Shepard", "J. Hone" ], "comment": "20 pages (includes supplementary info), 7 figures", "journal": "Nature Nanotechnology 5, 722-726 (2010)", "doi": "10.1038/nnano.2010.172", "categories": [ "cond-mat.mes-hall" ], "abstract": "Graphene devices on standard SiO2 substrates are highly disordered, exhibiting characteristics far inferior to the expected intrinsic properties of graphene[1-12]. While suspending graphene above the substrate yields substantial improvement in device quality[13,14], this geometry imposes severe limitations on device architecture and functionality. Realization of suspended-like sample quality in a substrate supported geometry is essential to the future progress of graphene technology. In this Letter, we report the fabrication and characterization of high quality exfoliated mono- and bilayer graphene (MLG and BLG) devices on single crystal hexagonal boron nitride (h-BN) substrates, by a mechanical transfer process. Variable-temperature magnetotransport measurements demonstrate that graphene devices on h-BN exhibit enhanced mobility, reduced carrier inhomogeneity, and reduced intrinsic doping in comparison with SiO2-supported devices. The ability to assemble crystalline layered materials in a controlled way sets the stage for new advancements in graphene electronics and enables realization of more complex graphene heterostructres.", "revisions": [ { "version": "v1", "updated": "2010-05-26T19:36:00.000Z" } ], "analyses": { "keywords": [ "boron nitride substrates", "high-quality graphene electronics", "single crystal hexagonal boron nitride", "geometry imposes severe limitations", "substrate yields substantial improvement" ], "tags": [ "journal article", "famous paper" ], "publication": { "journal": "Nature Nanotechnology", "year": 2010, "month": "Oct", "volume": 5, "number": 10, "pages": 722 }, "note": { "typesetting": "TeX", "pages": 20, "language": "en", "license": "arXiv", "status": "editable", "adsabs": "2010NatNa...5..722D" } } }