{ "id": "1005.4350", "version": "v2", "published": "2010-05-24T15:08:37.000Z", "updated": "2010-11-05T17:20:27.000Z", "title": "Thermal Dissipation and Variability in Electrical Breakdown of Carbon Nanotube Devices", "authors": [ "Albert Liao", "Rouholla Alizadegan", "Zhun-Yong Ong", "Sumit Dutta", "K. Jimmy Hsia", "Eric Pop" ], "journal": "Phys. Rev. B 82, 205406 (2010)", "doi": "10.1103/PhysRevB.82.205406", "categories": [ "cond-mat.mes-hall", "cond-mat.mtrl-sci" ], "abstract": "We study high-field electrical breakdown and heat dissipation from carbon nanotube (CNT) devices on SiO2 substrates. The thermal \"footprint\" of a CNT caused by van der Waals interactions with the substrate is revealed through molecular dynamics (MD) simulations. Experiments and modeling find the CNT-substrate thermal coupling scales proportionally to CNT diameter and inversely with SiO2 surface roughness (~d/{\\Delta}). Comparison of diffuse mismatch modeling (DMM) and data reveals the upper limit of thermal coupling ~0.4 W/K/m per unit length at room temperature, and ~0.7 W/K/m at 600 C for the largest diameter (3-4 nm) CNTs. We also find semiconducting CNTs can break down prematurely, and display more breakdown variability due to dynamic shifts in threshold voltage, which metallic CNTs are immune to; this poses a fundamental challenge for selective electrical breakdowns in CNT electronics.", "revisions": [ { "version": "v2", "updated": "2010-11-05T17:20:27.000Z" } ], "analyses": { "subjects": [ "65.80.-g", "68.35.bp", "68.65.-k" ], "keywords": [ "carbon nanotube devices", "thermal dissipation", "variability", "thermal coupling scales", "van der waals interactions" ], "tags": [ "journal article" ], "publication": { "publisher": "APS", "journal": "Physical Review B", "year": 2010, "month": "Nov", "volume": 82, "number": 20, "pages": 205406 }, "note": { "typesetting": "TeX", "pages": 0, "language": "en", "license": "arXiv", "status": "editable", "adsabs": "2010PhRvB..82t5406L" } } }