{
  "id": "1005.1237",
  "version": "v1",
  "published": "2010-05-07T15:51:16.000Z",
  "updated": "2010-05-07T15:51:16.000Z",
  "title": "Heterointerface effects on the charging energy of shallow D- ground state in silicon: the role of dielectric mismatch",
  "authors": [
    "M. J. Calderon",
    "J. Verduijn",
    "G. P. Lansbergen",
    "G. C. Tettamanzi",
    "S. Rogge",
    "Belita Koiller"
  ],
  "comment": "7 pages, 6 figures",
  "journal": "Phys. Rev. B 82, 075317 (2010)",
  "doi": "10.1103/PhysRevB.82.075317",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "Donor states in Si nanodevices can be strongly modified by nearby insulating barriers and metallic gates. We report here experimental results indicating a strong reduction in the charging energy of isolated As dopants in Si FinFETs relative to the bulk value. By studying the problem of two electrons bound to a shallow donor within the effective mass approach, we find that the measured small charging energy may be due to a combined effect of the insulator screening and the proximity of metallic gates.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2010-05-07T15:51:16.000Z"
    }
  ],
  "analyses": {
    "subjects": [
      "85.30.-z",
      "03.67.Lx",
      "73.20.Hb",
      "85.35.Gv"
    ],
    "keywords": [
      "charging energy",
      "ground state",
      "dielectric mismatch",
      "heterointerface effects",
      "metallic gates"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "publisher": "APS",
      "journal": "Physical Review B",
      "year": 2010,
      "month": "Aug",
      "volume": 82,
      "number": 7,
      "pages": "075317"
    },
    "note": {
      "typesetting": "TeX",
      "pages": 7,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2010PhRvB..82g5317C"
    }
  }
}