{
  "id": "1004.5560",
  "version": "v1",
  "published": "2010-04-30T15:34:24.000Z",
  "updated": "2010-04-30T15:34:24.000Z",
  "title": "Scalability of Atomic-Thin-Body (ATB) Transistors Based on Graphene Nanoribbons",
  "authors": [
    "Qin Zhang",
    "Yeqing Lu",
    "Huili Grace Xing",
    "Steven J. Koester",
    "Siyuranga O. Koswatta"
  ],
  "comment": "4 figures, accepted by EDL",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "A general solution for the electrostatic potential in an atomic-thin-body (ATB) field-effect transistor geometry is presented. The effective electrostatic scaling length, {\\lambda}eff, is extracted from the analytical model, which cannot be approximated by the lowest order eigenmode as traditionally done in SOI-MOSFETs. An empirical equation for the scaling length that depends on the geometry parameters is proposed. It is shown that even for a thick SiO2 back oxide {\\lambda}eff can be improved efficiently by thinner top oxide thickness, and to some extent, with high-k dielectrics. The model is then applied to self-consistent simulation of graphene nanoribbon (GNR) Schottky-barrier field-effect transistors (SB-FETs) at the ballistic limit. In the case of GNR SB-FETs, for large {\\lambda}eff, the scaling is limited by the conventional electrostatic short channel effects (SCEs). On the other hand, for small {\\lambda}eff, the scaling is limited by direct source-to-drain tunneling. A subthreshold swing below 100mV/dec is still possible with a sub-10nm gate length in GNR SB-FETs.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2010-04-30T15:34:24.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "graphene nanoribbon",
      "atomic-thin-body",
      "conventional electrostatic short channel effects",
      "scalability",
      "gnr sb-fets"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "doi": "10.1109/LED.2010.2045100",
      "journal": "IEEE Electron Device Letters",
      "year": 2010,
      "month": "Jun",
      "volume": 31,
      "number": 6,
      "pages": 531
    },
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2010IEDL...31..531Z"
    }
  }
}