{ "id": "1004.4042", "version": "v1", "published": "2010-04-23T02:24:02.000Z", "updated": "2010-04-23T02:24:02.000Z", "title": "Room-temperature Tunable Fano Resonance by Chemical Doping in Few-layer Graphene Synthesized by Chemical Vapor Deposition", "authors": [ "Zhihong Liu", "Xiaoxiang Lu", "Peng Peng", "Wei Wu", "Steven Pei", "Qingkai Yu", "Jiming Bao" ], "comment": "14 pages, 4 figures", "doi": "10.1103/PhysRevB.82.155435", "categories": [ "cond-mat.mes-hall", "cond-mat.mtrl-sci" ], "abstract": "A Fano-like phonon resonance is observed in few-layer (~3) graphene at room temperature using infrared Fourier transform spectroscopy. This Fano resonance is the manifestation of a strong electron-phonon interaction between the discrete in-plane lattice vibrational mode and continuum electronic excitations in graphene. By employing ammonia chemical doping, we have obtained different Fano line shapes ranging from anti-resonance in hole-doped graphene to phonon-dominated in n-type graphene. The Fano resonance shows the strongest interference feature when the Fermi level is located near the Dirac point. The charged phonon exhibits much-enhanced oscillator strength and experiences a continuous red shift in frequency as electron density increases. It is suggested that the phonon couples to different electronic transitions as Fermi level is tuned by chemical doping.", "revisions": [ { "version": "v1", "updated": "2010-04-23T02:24:02.000Z" } ], "analyses": { "subjects": [ "73.22.Pr", "78.30.-j", "78.67.Wj" ], "keywords": [ "room-temperature tunable fano resonance", "chemical vapor deposition", "few-layer graphene", "chemical doping", "discrete in-plane lattice vibrational mode" ], "tags": [ "journal article" ], "publication": { "publisher": "APS", "journal": "Physical Review B", "year": 2010, "month": "Oct", "volume": 82, "number": 15, "pages": 155435 }, "note": { "typesetting": "TeX", "pages": 14, "language": "en", "license": "arXiv", "status": "editable", "adsabs": "2010PhRvB..82o5435L" } } }