{ "id": "1004.3199", "version": "v2", "published": "2010-04-19T14:03:39.000Z", "updated": "2010-04-20T00:20:13.000Z", "title": "Evolution of the potential-energy surface of amorphous silicon", "authors": [ "Houssem Kallel", "Normand Mousseau", "François Schiettekatte" ], "comment": "5 pages, 4 figures", "categories": [ "cond-mat.dis-nn", "cond-mat.mtrl-sci", "cond-mat.stat-mech" ], "abstract": "The link between the energy surface of bulk systems and their dynamical properties is generally difficult to establish. Using the activation-relaxation technique (ART nouveau), we follow the change in the barrier distribution of a model of amorphous silicon as a function of the degree of relaxation. We find that while the barrier-height distribution, calculated from the initial minimum, is a unique function that depends only on the level of distribution, the reverse-barrier height distribution, calculated from the final state, is independent of the relaxation, following a different function. Moreover, the resulting gained or released energy distribution is a simple convolution of these two distributions indicating that the activation and relaxation parts of a the elementary relaxation mechanism are completely independent. This characterized energy landscape can be used to explain nano-calorimetry measurements.", "revisions": [ { "version": "v2", "updated": "2010-04-20T00:20:13.000Z" } ], "analyses": { "subjects": [ "61.43.Dq", "61.43.Bn", "65.60.+a", "66.30.-h" ], "keywords": [ "amorphous silicon", "potential-energy surface", "reverse-barrier height distribution", "elementary relaxation mechanism", "explain nano-calorimetry measurements" ], "tags": [ "journal article" ], "publication": { "doi": "10.1103/PhysRevLett.105.045503", "journal": "Physical Review Letters", "year": 2010, "month": "Jul", "volume": 105, "number": 4, "pages": "045503" }, "note": { "typesetting": "TeX", "pages": 5, "language": "en", "license": "arXiv", "status": "editable", "adsabs": "2010PhRvL.105d5503K" } } }