{ "id": "1003.2669", "version": "v2", "published": "2010-03-13T03:20:11.000Z", "updated": "2010-08-18T05:19:24.000Z", "title": "Tunneling Spin Injection into Single Layer Graphene", "authors": [ "Wei Han", "K. Pi", "K. M. McCreary", "Yan Li", "Jared J. I. Wong", "A. G. Swartz", "R. K. Kawakami" ], "comment": "10 pages, 4 figures. To appear in Physical Review Letters", "journal": "Phys. Rev. Lett. 105, 167202 (2010)", "doi": "10.1103/PhysRevLett.105.167202", "categories": [ "cond-mat.mes-hall", "cond-mat.mtrl-sci" ], "abstract": "We achieve tunneling spin injection from Co into single layer graphene (SLG) using TiO2 seeded MgO barriers. A non-local magnetoresistance ({\\Delta}RNL) of 130 {\\Omega} is observed at room temperature, which is the largest value observed in any material. Investigating {\\Delta}RNL vs. SLG conductivity from the transparent to the tunneling contact regimes demonstrates the contrasting behaviors predicted by the drift-diffusion theory of spin transport. Furthermore, tunnel barriers reduce the contact-induced spin relaxation and are therefore important for future investigations of spin relaxation in graphene.", "revisions": [ { "version": "v2", "updated": "2010-08-18T05:19:24.000Z" } ], "analyses": { "subjects": [ "85.75.-d", "72.25.Hg", "73.40.Gk", "81.05.ue" ], "keywords": [ "single layer graphene", "spin relaxation", "tunneling contact regimes demonstrates", "tio2 seeded mgo barriers", "tunnel barriers reduce" ], "tags": [ "journal article" ], "publication": { "publisher": "APS", "journal": "Physical Review Letters", "year": 2010, "month": "Oct", "volume": 105, "number": 16, "pages": 167202 }, "note": { "typesetting": "TeX", "pages": 10, "language": "en", "license": "arXiv", "status": "editable", "adsabs": "2010PhRvL.105p7202H" } } }