{ "id": "1002.4942", "version": "v1", "published": "2010-02-26T09:01:08.000Z", "updated": "2010-02-26T09:01:08.000Z", "title": "Observation of Raman G-band splitting in top-doped few-layer graphene", "authors": [ "M. Bruna", "S. Borini" ], "comment": "7 pages, 6 figures, to be published in PRB", "journal": "Phys. Rev. B 81, 125421 (2010)", "doi": "10.1103/PhysRevB.81.125421", "categories": [ "cond-mat.mes-hall", "cond-mat.mtrl-sci" ], "abstract": "An experimental study of Raman scattering in N-layer graphene as a function of the top layer doping is reported. At high doping level, achieved by a CHF_3 plasma treatment, we observe a splitting of the $G$ band in the spectra of bilayer and 4-layer graphene (N even), whereas the splitting is not visible in case of monolayer and trilayer graphene (N odd). The different behaviors are related to distinct electron-phonon interactions, which are affected by symmetry breaking and Fermi level position in different ways in the various N-layer graphenes. In trilayer graphene, a weakening of the electron-phonon coupling as a function of the Fermi energy induces a hardening of all zone-center in-plane optical phonon modes, like in monolayer graphene. On the other hand, in 4-layer graphene two distinct trends are observed in the G band as a function of doping, suggesting the presence of two different groups of electron-phonon interactions, like in bilayer graphene.", "revisions": [ { "version": "v1", "updated": "2010-02-26T09:01:08.000Z" } ], "analyses": { "subjects": [ "78.30.Na", "63.20.K-" ], "keywords": [ "top-doped few-layer graphene", "raman g-band splitting", "observation", "n-layer graphene", "trilayer graphene" ], "tags": [ "journal article" ], "publication": { "publisher": "APS", "journal": "Physical Review B", "year": 2010, "month": "Mar", "volume": 81, "number": 12, "pages": 125421 }, "note": { "typesetting": "TeX", "pages": 7, "language": "en", "license": "arXiv", "status": "editable", "adsabs": "2010PhRvB..81l5421B" } } }