{
  "id": "1002.2732",
  "version": "v1",
  "published": "2010-02-13T21:23:08.000Z",
  "updated": "2010-02-13T21:23:08.000Z",
  "title": "Supersymmetry Across Nanoscale Heterojunction",
  "authors": [
    "B. Bagchi",
    "A. Ganguly",
    "A. Sinha"
  ],
  "comment": "7 pages, 2 figures",
  "journal": "Physics Letters A 374 (2010) 2397-2400",
  "categories": [
    "cond-mat.mes-hall",
    "cond-mat.mtrl-sci",
    "math-ph",
    "math.MP",
    "quant-ph"
  ],
  "abstract": "We argue that supersymmetric transformation could be applied across the heterojunction formed by joining of two mixed semiconductors. A general framework is described by specifying the structure of ladder operators at the junction for making quantitative estimation of physical quantities. For a particular heterojunction device, we show that an exponential grading inside a nanoscale doped layer is amenable to exact analytical treatment for a class of potentials distorted by the junctions through the solutions of transformed Morse-Type potentials.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2010-02-13T21:23:08.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "nanoscale heterojunction",
      "supersymmetry",
      "transformed morse-type potentials",
      "supersymmetric transformation",
      "exact analytical treatment"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "doi": "10.1016/j.physleta.2010.04.001",
      "journal": "Physics Letters A",
      "year": 2010,
      "month": "May",
      "volume": 374,
      "number": 23,
      "pages": 2397
    },
    "note": {
      "typesetting": "TeX",
      "pages": 7,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2010PhLA..374.2397B"
    }
  }
}