{
  "id": "1002.2528",
  "version": "v1",
  "published": "2010-02-12T12:26:01.000Z",
  "updated": "2010-02-12T12:26:01.000Z",
  "title": "Circular photogalvanic effect in HgTe/CdHgTe quantum well structures",
  "authors": [
    "B. Wittmann",
    "S. N. Danilov",
    "V. V. Bel'kov",
    "S. A. Tarasenko",
    "E. G. Novik",
    "H. Buhmann",
    "C. Brüne",
    "L. W. Molenkamp",
    "Z. D. Kvon",
    "N. N. Mikhailov",
    "S. A. Dvoretsky",
    "N. Q. Vinh",
    "A. F. G. van der Meer",
    "B. Murdin",
    "S. D. Ganichev"
  ],
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We describe the observation of the circular and linear photogalvanic effects in HgTe/CdHgTe quantum wells. The interband absorption of mid-infrared radiation as well as the intrasubband absorption of terahertz (THz) radiation in the QWs structures is shown to cause a dc electric current due to these effects. The photocurrent magnitude and direction varies with the radiation polarization state and crystallographic orientation of the substrate in a simple way that can be understood from a phenomenological theory. The observed dependences of the photocurrent on the radiation wavelength and temperature are discussed.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2010-02-12T12:26:01.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "circular photogalvanic effect",
      "structures",
      "hgte/cdhgte quantum wells",
      "radiation polarization state",
      "linear photogalvanic effects"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "doi": "10.1088/0268-1242/25/9/095005",
      "journal": "Semiconductor Science Technology",
      "year": 2010,
      "month": "Sep",
      "volume": 25,
      "number": 9,
      "pages": "095005"
    },
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2010SeScT..25i5005W"
    }
  }
}