{
  "id": "0912.3327",
  "version": "v1",
  "published": "2009-12-17T07:24:47.000Z",
  "updated": "2009-12-17T07:24:47.000Z",
  "title": "Quantum tunneling through planar p-n junctions in HgTe quantum wells",
  "authors": [
    "L. B. Zhang",
    "Kai Chang",
    "X. C. Xie",
    "H. Buhmann",
    "L. W. Molenkamp"
  ],
  "comment": "4 pages, 4 figures",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We demonstrate that a p-n junction created electrically in HgTe quantum wells with inverted band-structure exhibits interesting intraband and interband tunneling processes. We find a perfect intraband transmission for electrons injected perpendicularly to the interface of the p-n junction. The opacity and transparency of electrons through the p-n junction can be tuned by changing the incidence angle, the Fermi energy and the strength of the Rashba spin-orbit interaction. The occurrence of a conductance plateau due to the formation of topological edge states in a quasi-one-dimensional p-n junction can be switched on and off by tuning the gate voltage. The spin orientation can be substantially rotated when the samples exhibit a moderately strong Rashba spin-orbit interaction.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2009-12-17T07:24:47.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "hgte quantum wells",
      "planar p-n junctions",
      "quantum tunneling",
      "moderately strong rashba spin-orbit interaction",
      "perfect intraband transmission"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "doi": "10.1088/1367-2630/12/8/083058",
      "journal": "New Journal of Physics",
      "year": 2010,
      "month": "Aug",
      "volume": 12,
      "number": 8,
      "pages": "083058"
    },
    "note": {
      "typesetting": "TeX",
      "pages": 4,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2010NJPh...12h3058Z"
    }
  }
}