{
  "id": "0910.4665",
  "version": "v1",
  "published": "2009-10-26T19:44:12.000Z",
  "updated": "2009-10-26T19:44:12.000Z",
  "title": "Current Saturation and Surface Polar Phonon Scattering in Graphene",
  "authors": [
    "Vasili Perebeinos",
    "Phaedon Avouris"
  ],
  "comment": "5 pages, 3 figures",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We present a study of transport in graphene devices on polar insulating substrates using a tight-binding model. The mobility is computed using a multiband Boltzmann treatment. We provide the scaling of the surface polar phonon contribution to the low-field mobility with carrier density, temperature, and distance from the substrate. At high bias, we find that graphene self-heating effect is essential to account for the observed saturated current behavior. We predict that by optimizing the device cooling, the high bias currents can be significantly enhanced.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2009-10-26T19:44:12.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "surface polar phonon scattering",
      "current saturation",
      "surface polar phonon contribution",
      "high bias currents",
      "multiband boltzmann treatment"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 5,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2009arXiv0910.4665P"
    }
  }
}